A high-performance cryogenic amplifier based on a radio-frequency single electron transistor
نویسندگان
چکیده
We demonstrate a high-performance cryogenic amplifier based on a radio-frequency single-electrontransistor ~rf-SET!. The high charge sensitivity and large bandwidth of the rf-SET, along with low power dissipation, low capacitance and on-chip integrability, make it a good candidate for a general-purpose cryogenic amplifier for high impedance sources. We measure a large-gate rf-SET with an open-loop voltage noise of 30 nV/A(Hz), among the lowest reported voltage noise figures for a SET. Using a closed-loop transimpedance configuration, the amplifier shows almost 2 orders of magnitude increase in dynamic range, a 3 dB bandwidth of 30 kHz, and a transimpedance gain of 50 V/mA for a cryogenic 1 MV load resistor. The performance of this amplifier is already sufficient for use as an integrated readout with some types of high-performance cryogenic detectors for astrophysics. © 2002 American Institute of Physics. @DOI: 10.1063/1.1530751#
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